Research 研究项目
Applications of Huang-Rhys model in interdisciplinary science
Huang-Rhys model has been proposed in one of his famous papers (K.Huang and A.Rhys, Proc. Roy. Soc. A 204, 406, 1950), in which they presented the radiation transition and the noradiation processes accompanying by multiphonons for the F color center.
30 Views DetailsApplications of Huang-Rhys model in interdisciplinary science
Huang-Rhys model has been proposed in his famous papers (K. Huang and A. Rhys, Proc.Roy.Soc.A 204, 406, 1950), in which they presented the radiation and the non-radiation quantum transition processes accompanying by multi-phonons scattering in the F color center. Since then the well-known Huang-Rhys factor was defined describing the strength of lattice relaxation. In the past few decades, this model has been used extensively in many research areas, such as charge capture of impurity state, phonon replicas in spectroscopy, multiphonons Raman scattering and carriers transfer in molecules. Many novel explorations and applications for Huang-Rhys model in low dimensional system are still on the way.
Both radiation and non-radiation transitions mediated by the multiphonon scattering in the Huang–Rhys model are schemed in configuration coordinate diagram.
In frame of the Huang-Rhys model, we are currently interest in following topics
- Multi-phonons Raman scattering in low dimensional system.
- Spin relaxation mediated by multi-phonons scattering in nanostructures.
- Coherent phonons transition among quantum levels.
- Capture processes of charge carriers in MOSFTE devices.
Explorations of the polaron and exciton-polaron state in two-dimensional materials
Polaron and exciton-polaron are the carriers (electron and hole) dressed by phonons and its abundant physical contents need to explore in 2D materials.
30 Views DetailsExplorations of polaron and exciton-polaron state in 2D materials
Polaron and exciton-polaron are the carriers (electron and hole) dressed by phonons and its abundant physics are vigorously explored in two dimensional materials.
(a) The schematic diagram of polaron state in graphene/polar substrate structure;
(b) schematic diagram of intralayer exciton state in sandwich structure PSM/TMDS/PSM;
(c) schematic diagram of interlayer exciton state in sandwiched structure TMDS/PSM/TMDS. TMDS (transition metal dichalcogenides) and PSM (polar substrate materials).
Using the methods of linear operators, perturbation theory and unitary transformation, we are currently interest in the following topics
- Surface optical polaron state in monolayer material/polar semiconductor heterostructures.
- Interlayer and intralayer exciton-polaron states in sandwiched structures based on these monolayer materials.
- Optical absorption of polaron in low dimensional system.