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亚稳态铁磁/铁电异质结的磁电耦合效应

发布人: admin 发布时间: 2017-06-02 16:28:16 浏览: 198 次

报告人: 郑东兴
报告时间:2017-06-07 15:30:00
报告地点:天津大学北洋园校区32楼B120

摘要:

  自组装全氧化物人工异质界面作为新奇物理现象如二维电子气、超导效应、金属绝缘体转变、多铁性等的源泉,成为凝聚态物理及材料科学研究领域的热点。我们采用磁控溅射法制备全氧化物铁磁/铁电多铁异质结。通过单晶衬底应力,获取了铁磁、反铁磁共存的亚稳态异质结,发现亚稳态对异质结磁电耦合特性具有显著的影响。由于复杂多元氧化物界面的电荷、自旋、轨道和晶格自由度存在着强关联,外加电场或磁场引起亚稳态异质结界面发生轨道重构和电荷转移,有望实现对该类型异质结磁、电输运性质的巨可逆调控,为新型磁电存储器件的设计提供依据。


Abstract: 

The all oxide artificial heterointerfaces as a fountain of novel physical properties like two-dimension electron gas, superconductivity, metal-insulator transitions and multiferroicity has flourished the field of condensed physics and materials science. We fabricated the ferromagnetic/ferroelectric all oxide multiferroic heterostructures by facing-target magnetron sputtering method, and reveal the magnetoelectric coupling mechanism. We achieve the metastable state by fabricating the heterostructures on the single crystal substrates with different lattice parameters. And we found that the metastable state has a strong effect on the magnetoelectric coupling effects of the artificial structures. Due to the strong correlation among charge, spin, orbital and lattice degrees at the interface, it would be possible to introduce orbital reconstruction and charge transfer by applying electric or magnetic fields to the all oxide ferromagnetic/ferroelectric heterostructures. Thus, we will be able to achieve the giant reversible modulation of their magnetic and electric transport properties and benefit the design of next generation information storage devices.


郑东兴

  • 2016/10−至今:天津大学,理学院应用物理学系,讲师
  • 2011/09−2016/06:天津大学,理学院材料物理与化学专业,硕博连读,工学博士
  • 2007/09−2011/07:天津大学,理学院应用物理学系,本科生,理学、管理学学士