The strong Coulomb interaction between electrons and holes is the most significant property of these monolayer materials arising from the reduced dimensionality and dielectric screening. This enhanced interaction leads to the formation of tightly bound excitons and large exciton binding energies, which implies rich excitonic physics in these monolayer materials. We theoretically investigate the correction of exciton binding energy arising from the exciton optical phonon coupling in monolayer transition metal dichalcogenides (TMDs) using the linear operator and Lee-Low-Pines unitary transformation methods. We take into account not only the exciton coupling with the intrinsic longitudinal optical (LO) phonon modes, but also the surface optical phonon modes induced by the polar substrates supporting monolayer TMDs. We find that the exciton binding energies are corrected in large scale due to these exciton-optical phonon couplings. We present the dependences of exciton binding energy on the cut-off wave vector of optical phonon modes, the polarization strength of substrate materials and the distance between polar substrates and TMDs. These results provide potential explanations for the discrepancy of the exciton binding energy between experiment and theory in TMDs. In addition, we will introduce the recent experimental and theoretical progress for the interlayer and intralayer excitons in these layered heterostructures.