2012年10月－至今，天津大学，物理系工作
2016年1月－2016年12月，台湾交通大学，物理所，博士后
2010年3月－2012年10月，华东师范大学，信息学院，博士后
2007年3月－2010年3月，上海技术物理研究所，红外物理实验室，博士
2004年9月－2007年3月，天津大学，物理系，硕士
1999年9月－2003年6月，河北师范大学，物理系，本科

研究方向1：低维半导体材料输运性质
研究方向2：宽禁带半导体与器件

代表性论文如下：
19. Y. Yang, K.H. Gao*, W.J. Wang, G. Yu, Y. Sun*, X.H. Zhang, and Z.Q. Li*, Anomalous electron-electron interactions in epitaxial graphene on SiC, Carbon, 184, 287 (2021).

18. K.H. Gao*, Q.L. Li, X.R. Ma, Y. Sun*, X.H. Zhang, and Z.Q. Li, Room-temperature quantum transport phenomenon in low-temperature-grown Zn1-xMgxO/ZnO heterostructures, The Journal of Physical Chemistry C, 124, 6700 (2020).

17. X.R. Ma, X.H. Zhang, Y.F. Gao, Q.L. Li, and K.H. Gao*, Low-temperature positive magnetoresistance in ZnO-based heterostructures, Semiconductors Science and Technology, 35, 105026 (2020).
16. K.H Gao*, X.R Ma, D.B Zhou, S. Li, Z.Q Li, T Lin*, X.H Zhang, and W.Z Zhou, Magnetotransport property of graded AlGaN/GaN heterostructure, Superlattices and Microstructures 135, 106262 (2019).

15. X.R. Ma, X.H. Zhang, W.J. Wang, and K.H. Gao*, Linear magnetoresistance in Cr-doped Bi2Se3 thin film, Journal of Applied Physics, 125, 215704 (2019).

14. S.S. Yeh, K.H. Gao, T.L. Wu, T.K. Su, and J.J. Lin*, Activation Energy Distribution of Dynamical Structural Defects in RuO2 Films, Physical Review Applied 10, 034004 (2018).

13. K.H. Gao, G. Yu*, Y. Sun, T. Kang, X. Chen, N. Dai, and J.H. Chu, Large spin-orbit splitting in inversion layers on HgCdTewith an inverted band structure, Europhysics Letters 124, 27006 (2018).

12. Q.L. Li, X.H. Zhang, T. Lin, and K.H. Gao*, Electrical transport properties of polycrystalline SnO2 thin films, Journal of Alloys and Compounds 764, 295 (2018).

11. W.J. Wang, K.H. Gao*, Q.L. Li, and Z.Q Li, Disorder-dominated linear magnetoresistance in topological insulator Bi2Se3 thin films, Applied Physics Letters 111, 232105 (2017).
10. W.J. Wang, K.H. Gao*, and Z.Q. Li, Thickness-dependent transport channels in topological insulator Bi2Se3 thin films grown by magnetron sputtering, Scientific Reports 6, 25291 (2016).
9. F. Wu, K.H. Gao*, Z.Q. Li, T. Lin, and W. Z. Zhou, Effects of GaN interface on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures, Journal of Applied Physics 117, 155701 (2015).
8. W.J. Wang, K.H. Gao*, and Z.Q. Li, T. Lin, J. Li, C. Yu, and Z.H. Feng, Classical linear magnetoresistance in epitaxial graphene on SiC, Applied Physics Letters 105, 182102 (2014).
7. K.H. Gao*, Q.W. Wang, T. Lin, Z. Q. Li, X. H. Zhang, J. Xu, H.Y. Deng, and J.H. Chu, Large magnetoresistance in (In,Zn)As/InAs p-n junction, Europhysics Letters 102, 37009 (2013).
6. K.H. Gao*, Q.W. Wang, G. Yu, T. Lin, H.Y. Deng, N. Dai, and J.H. Chu, Magnetotransport properties of (In,Zn)As/InAs p-n junctions, Applied Physics Letters 98, 142110 (2011).
5. K.H. Gao, G. Yu, Y.M. Zhou, L.M. Wei, T. Lin, L.Y. Shang, L. Sun, R. Yang, W.Z. Zhou, N. Dai, J.H. Chu, D.G. Austing, Y. Gu, and Y.G. Zhang, Insulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum well, Journal of Applied Physics 108, 063701 (2010).
4. K.H. Gao, W.Z. Zhou, Y.M. Zhou, G. Yu, T. Lin, S.L. Guo, J.H. Chu, N. Dai, Y. Gu, Y.G. Zhang, and D.G. Austing, Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well, Applied Physics Letters 94, 152107 (2009).
3. K.H. Gao, G. Yu, Y.M. Zhou, W.Z. Zhou, T. Lin, J.H. Chu, N. Dai, D.G. Austing, Y. Gu, and Y.G. Zhang, Experimental study of weak antilocalization effects in two-dimensional system: Anomalous dephasing rate, Physical Review B 79, 085310 (2009).
2. K.H. Gao, G. Yu, Y.M. Zhou, W.Z. Zhou, T. Lin, J.H. Chu, N. Dai, A.J. SpringThorpe, and D. G. Austing, Transport properties of AlGaAs/GaAs parabolic quantum wells, Journal of Applied Physics 105, 013712 (2009).
1. K.H. Gao, Z.Q. Li, T. Du, E.Y. Jiang, and Y.X. Li, Ferromagnetic properties of bulk Cu1-xMnxO magnetic semiconductors. Physical Review B 75, 174444 (2007).

1. 王文洁* （2012.09—2017.12 硕博连读）
攻读学位期间发表的论文：
（1）W.J. Wang, K.H. Gao*, Q.L. Li, and Z.Q Li, Disorder-dominated linear magnetoresistance in topological insulator Bi2Se3 thin films, Applied Physics Letters 111, 232105 (2017).

（2） W.J. Wang, K.H. Gao*, and Z.Q. Li, Thickness-dependent transport channels in topological insulator Bi2Se3 thin films grown by magnetron sputtering, Scientific Reports 6, 25291 (2016).

（3）W.J. Wang, X.J. Xie, J.Y. Liu, and K.H. Gao*, Weak localization in CdO thin films prepared by sol–gel method, Solid State Communications 239, 1 (2016).

（4） W.J. Wang, K.H. Gao*, Z.Q. Li, T. Lin, J. Li, C. Yu, and Z.H. Feng, Classical linear magnetoresistance in epitaxial graphene on SiC, Applied Physics Letters 105, 182102 (2014).
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2. 吴罚* （2012.09—2015.06 硕士）
攻读学位期间发表的论文：
（1） F. Wu, K.H. Gao*, Z.Q. Li, T. Lin, and W. Z. Zhou, Effects of GaN interface on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures, Journal of Applied Physics 117, 155701 (2015).
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3. 李秋林 （2016.09—2019.06 硕士）
攻读学位期间发表的论文：
（1）Q.L Li, X.H Zhang, W.J Wang, Z.Q. Li, D.B Zhou,and K.H Gao*, Time-Dependent Electrical Transport Properties ofTopological Insulator Cr-Doped Bi2Se3 Thin Films, Physica Status Solidi B 256, 1800735 (2019).

（2）Q.L. Li, X.H. Zhang, T. Lin, and K.H. Gao*, Electrical transport properties of polycrystalline SnO2 thin films, Journal of Alloys and Compounds 764, 295 (2018).
（3）W.J. Wang, K.H. Gao*, Q.L. Li, and Z.Q Li, Disorder-dominated linear magnetoresistance in topological insulator Bi2Se3 thin films, Applied Physics Letters 111, 232105 (2017).
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4. 马晓蓉 （2018.09—2021.06  硕士在读）
攻读学位期间发表的论文：

（1）X.R. Ma, X.H. Zhang, W.J. Wang, and K.H. Gao*, Linear magnetoresistance in Cr-doped Bi2Se3thin film, Journal of Applied Physics, 125, 215704 (2019).

（2）K.H Gao*, X.R Ma, D.B Zhou, S. Li, Z.Q Li, T Lin*, X.H Zhang, and W.Z Zhou, Magnetotransport property of graded AlGaN/GaN heterostructure, Superlattices and Microstructures 135, 106262 (2019).
（3）K.H. Gao*, X.R. Ma, X.H. Zhang, W.Z. Zhou, and T. Lin*,  Zero-field spin splitting in AlInN/GaN heterostructures, Physica B: Physics of Condensed Matter, 595, 412370 (2020).
（4）X.R. Ma, X.H. Zhang, Y.F. Gao, Q.L. Li, and K.H. Gao*, Low-temperature positive magnetoresistance in ZnO-based heterostructures, Semiconductors Science and Technology, 35, 105026 (2020).

（5）K.H. Gao*, X.R. Ma, Q.L. Li, et al., High room-temperature mobility in Al2O3/SrTiO3 heterostructures (submitted).











备注：（*表示协助李志青教授指导）