论文专著2022年
1. X. Liu*, P. Zhang, S.K. Nath, S. Li, S.K. Nandi, R.G. Elliman. Understanding composite negative differential resistance in niobium oxide memristors, Journal of Physics D: Applied Physics, 55, 105106 (2022). https://doi.org/10.1088/1361-6463/ac3bf4
2. Z. Luo, Y. Bo, S.M. Sadaf, X. Liu*. Van der Pol oscillator based on NbO2 volatile memristor: A simulation analysis, Journal of Applied Physics, 131, 054501, (2022). https://doi.org/10.1063/5.0073285
3. Y. Bo, Z. Luo, X. Liu*. Amplifier based on NbOx volatile memristor, in preparation, (2022).
2021年 1. Y.W. Zhang*, B. Li, Z. Wu, Z. Qin, H. Ji, X. Liu, B. Li and W. Hu. Modulation of magnetoresistance and field sensitivity of Co-ZnO nanocomposite film by microstructure controlling. Journal of Physics D: Applied Physics, 54, 365003, (2021). https://doi.org/10.1088/1361-6463/ac0ad3 2. B. Li, Y.W. Zhang*, Z. Wu, Z. Qin, H. Ji, X. Liu, B. Li and W. Hu. Magnetic properties and corrosion resistance of Co-DLC nanocomposite films with different cobalt contents. Diamond & Related Materials, 117, 108477, (2021). https://doi.org/10.1016/j.diamond.2021.108477 2020年 1. S.K. Nath*, S.K. Nandi, A.E. Helou, X. Liu, S. Li, T. Ratcliff, P.E. Raad, R.G. Elliman*. Schottky-Barrier-Induced Asymmetry in the Negative-Differential-Resistance Response of Nb/NbOx/Pt Cross-Point Devices, Physical Review Applied, 13, 064024, (2020). https://doi.org/10.1103/PhysRevApplied.13.064024 2. Y. Bo, P. Zhang, Z. Luo, S. Li, J. Song, and X. Liu*. NbO2 Memristive Neurons for Burst-Based Perceptron, Advanced Intelligent Systems, 2, 2000066 (2020). https://doi.org/10.1002/aisy.202000066 X. Liu, Artificial neural networks built with memristive neurons, Advanced Science News, based on the article from Advanced Intelligent Systems (2020). https://www.advancedsciencenews.com/artificial-neural-networks-built-with-memristive-neurons/ 3. Y. Bo, P. Zhang, Y. Zhang, J. Song, S. Li, and X. Liu*, Spiking dynamic behaviours of NbO2 memristive neurons: A model study, Journal of Applied Physics, 127, 245101, (2020). [Featured Article] https://doi.org/10.1063/5.0004139
2019年 1. S. Li, X. Liu*, S.K. Nandi, S.K. Nath, and R.G. Elliman*. Origin of current-controlled negative differential resistance modes and the emergence of composite characteristics with high complexity, Advanced Functional Materials, 29, 1905060, (2019). https://doi.org/10.1002/adfm.201905060 2. P. Zhang, S. Li, Y.H. Bo, and X. Liu*. Collective dynamics of capacitively coupled oscillators based on NbO2 memristors, Journal of Applied Physics, 126, 125112, (2019). https://doi.org/10.1063/1.5116777 3. S.K. Nandi*, S.K. Nath, A.E. Helou, S. Li, X. Liu, P.E. Raad, R.G. Elliman*. Current localization andredistribution as the basis of discontinuous current controlled negativedifferential resistance in NbOx, Advanced Functional Materials, 29, 1906731, (2019). https://doi.org/10.1002/adfm.201906731
2019年以前 第一作者和通讯作者文章:
1. S. Li, X. Liu (刘新军, 共同通讯作者), S.K. Nandi, and R.G. Elliman (共同通讯作者). Anatomy of filamentary threshold switching in amorphous niobium oxide, Nanotechnology, 29, 375705, (2018).
2. S.K. Nandi (共同通讯作者), S. Li, X. Liu (刘新军, 共同通讯作者), and R.G. Elliman. Temperature dependent frequency tuning of NbOx relaxation oscillators, Applied Physics Letters, 111, 202901, (2017).
3. S. Li, X. Liu (刘新军, 共同通讯作者), S.K. Nandi, D.K. Venkatachalam, and R.G. Elliman (共同通讯作者). Coupling dynamics of Nb/Nb2O5 relaxation oscillators, Nanotechnology, 28, 125201, (2017).
4. X. Liu (刘新军), S. Li, S.K. Nandi, D.K.Venkatachalam, and R.G. Elliman. Threshold switching and electrical self-oscillation in niobium oxide films, Journal of Applied Physics, 120, 124102, (2016).
5. S.K. Nandi (共同通讯作者), X. Liu (刘新军, 共同通讯作者), D.K. Venkatachalam, and R.G. Elliman. Self-assembly of an NbO2interlayer and configurable resistive switching in Pt/Nb/HfO2/Pt structures, Applied Physics Letters, 107, 132901, (2015).
6. S. Li, X. Liu (刘新军, 共同通讯作者), S.K. Nandi, D.K. Venkatachalam, and R.G. Elliman (共同通讯作者). High-endurance megahertz electrical self-oscillations in Ti/NbOx bilayer structures, Applied Physics Letters, 106, 212902, (2015).
7. X. Liu (刘新军), S.K. Nandi, D.K. Venkatachalam, K. Belay, S. Song, and R.G. Elliman. Reduced threshold current in NbO2 selector by engineering device structure, IEEE Electron Device Letters, 35,1055-1057, (2014).
8. X. Liu,S.K. Nandi, D.K. Venkatachalam, S. Li, K. Belay, and R.G. Elliman. Finite element modelling of resistive switching in Nb2O5-based memory device,Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD), P280-282 (2014).
9. X. Liu, S.M. Sadaf, S. Park, S. Kim, E. Cha, D. Lee, G.-Y. Jung, and H. Hwang. Complementary resistive switching in niobium oxide-based resistive memory devices, IEEE Electron Device Letters, 34, 235-237, (2013).
10. X. Liu, S.M. Sadaf, S. Kim, K.P. Biju, X. Cao, M. Son, S.H. Choudhury, G.-Y. Jung, H. Hwang. Improvement of resistive switching uniformity by introducing a thin NbOx interface layer, ECS Solid State Letters, 1, Q35-Q38, (2012).
11. X. Liu, K.P. Biju, J. Park, S.Park, J. Shin, I. Kim, S.M. Sadaf, and H. Hwang. Low power and controllablememory window in Pt/Pr0.7Ca0.3MnO3/Yttria-stabilizedZirconia/W resistive random-access memory devices, Journal of Nanoscience and Nanotechnology, 12, 3252-3255, (2012).
12. X. Liu, S.M. Sadaf, M. Son, J. Park,J. Shin, W. Lee, K. Seo, D. Lee, and H. Hwang. Co-occurrence of threshold switchingand memory switching in Pt/NbOx/Ptcells for crosspoint memory applications, IEEE Electron Device Letters, 33,236-238, (2012).
13. X. Liu, S.M. Sadaf, M. Son, J. Shin, J. Park, J. Lee, S. Park, and H.Hwang. Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications, Nanotechnology, 22, 475702, (2011).
14. X. Liu, K.P. Biju, J. Lee, J. Park, S. Kim, S. Park, J. Shin, S.M. Sadaf, and H. Hwang. Parallel memristive filaments model applicable to bipolar and filamentary resistive switching, Applied PhysicsLetters, 99, 113518, (2011).
15. X. Liu, K.P. Biju, E.M. Bourim,S. Park, W. Lee, D. Lee, K. Seo, and H. Hwang. Filament-type resistive switching inhomogeneous bi-layer Pr0.7Ca0.3MnO3 thin film memory devices, Electrochemical and Solid-State Letters,14, H9-H12, (2011).
16. X. Liu, K.P. Biju, S. Park, I.Kim, M. Siddik, S.M. Sadaf, and H. Hwang. Improved resistive switching propertiesin Pt/Pr0.7Ca0.3MnO3/Y2O3-stabilizedZrO2/W via-hole structures, Current Applied Physics, 11, e58-e61, (2011).
17. X. Liu, I.Kim, M. Siddik, S.M. Sadaf, K.P.Biju, S. Park, and H. Hwang. Resistive switching mechanism of a Pr0.7Ca0.3MnO3-basedmemory device and assessment of its suitability for nano-scale applications, Journal of the Korean Physical Society,59, 497-500, (2011).
18. X. Liu, K.P. Biju, E.M. Bourim,S. Park, W. Lee, J. Shin, and H. Hwang. Low programming voltage resistive switching in reactive metal/polycrystalline Pr0.7Ca0.3MnO3devices, Solid State Communications, 150, 2231-2235, (2010).
19. X. Liu, X. Li, W. Yu, Q. Wang,R. Yang, X. Cao, and L. Chen. Improved resistive switching properties in Ti/TiOx/La0.7Ca0.3MnO3/Ptstacked structures, Solid State Communications,150, 137-141, (2010).
20. X. Liu, X. Li, R. Yang, Q. Wang, X. Cao, W. Yu, and L. Chen. Interfacial resistive switching properties in Ti/La0.7Ca0.3MnO3/Pt sandwich structures, Physica Status Solidi (A):Applications and Materials Science,207, 1204-1209, (2010).
21. 刘新军, 李效民, 王群, 杨蕊, 曹逊, 陈立东. Study on the “negative”resistance switching property in Ti/La0.7Ca0.3MnO3/Pt结构器件中“负”电阻开关特性研究, 无机材料学报, 25, 151-156, (2010).
22. X. Liu, X. Li, W. Yu, Q. Wang, R. Yang, X. Cao, and L. Chen. Bipolar resistance switching property of Al-Ag/La0.7Ca0.3MnO3/Pt sandwiches, Journal of the Ceramic Society of Japan, 117,732-735, (2009).
23. X. Liu, Z. Li, P. Wu, H. Bai,and E. Jiang. The Effect of Fe doping on structural, magnetic and electrical transport properties of CaMn1-xFexO3 (x=0-0.35), Solid State Communications, 142, 525–530, (2007).
24. X. Liu, Z. Li, A. Yu, M. Liu,W. Li, B. Li, P. Wu, H. Bai, and E. Jiang. Magnetic, electrical transport and electron spin resonance studies of Fe-doped manganite LaMn0.7Fe0.3O3+δ, Journal of Magnetism and Magnetic Materials, 313, 354–360, (2007).
25. X. Liu, E. Jiang, Z. Li, B. Li,W. Li, A. Yu, P. Wu, and H. Bai. Magnetic, electrical transport and electron spin resonance studies of ferromagnetic insulating manganites Nd0.85Na0.15MnO3, Journal of Magnetism and Magnetic Materials,305, 352–356, (2006).
26. X. Liu, E. Jiang, Z. Li, B. Li,W. Li, A. Yu, and H. Bai. Magnetic, electrical transport and electron spin resonance studies of charge-ordered Nd0.75Na0.25MnO3, Physica B, 348, 146–150, (2004).
代表性合作文章:
27. D. Li, D. Zheng, C. Jin, P. Li, X. Liu(刘新军), W. Zheng, and H. Bai. Photoassisted electric field modulation of multiple nonvolatile resistance states in highly strained epitaxial BiFeO3 heterostructures, Advanced Electronic Materials, 18,1800171, (2018).
28. S.K. Nandi, X. Liu(刘新军),D.K. Venkatachalam, and R.G. Elliman. Effect of electrode roughness on electroforming in HfO2and defect-induced moderation of electric-field enhancement, Physical Review Applied, 4,064010, (2015).
29. S.K. Nandi, X. Liu(刘新军),D.K. Venkatachalam, and R.G. Elliman. Threshold current reduction for the metal-insulator transition in NbO2-x-selectordevices –the effect of ReRAM integration, Journal of Physics D: Applied Physics, 48, 195105, (2015).
30. A.S. Zoolfakar, R.A. Kadir, R.A.Rani, S. Balendhran, X. Liu (刘新军), E. Kats, S.K Bhargava, M.Bhaskaran, S. Sriram, S. Zhuiykov, A.P. O'Mullane, and K. Kalantar-Zadeh. Engineering electrodeposited ZnO films and their memristive switching performance,Phys. Chem. Chem. Phys., 15, 10376-10384, (2013).
31. S. Kim, X.Liu (刘新军), J. Park, S.Jung, W. Lee, J. Woo, J. Shin, G. Choi, C. Cho, S. Park, D. Lee, E. Cha, B.Lee, H. Lee, S. Kim, S. Chung, and H. Hwang. Ultrathin (~10 nm) Nb2O5/NbO2hybrid device and selector characteristics for high density 3D vertically stackable RRAM applications, Symposium on VLSI (Very Large Scale Integration) Technology, P155-156, Honolulu, Hawaii, USA, (June 12-14, 2012).
32. M. Son, X. Liu (刘新军), S.M. Sadaf, D. Lee, S. Park, W. Lee, S. Kim, J. Park, J. Shin, S. Jung, and H. Hwang.Self-selective characteristics of nanoscale VOx devices for high-density ReRAM applications, IEEE Electron Device Letters, 33, 718-720, (2012).
33. S.M. Sadaf, E.M. Bourim, X. Liu (刘新军), S.H.Choudhury, D. Kim, and H. Hwang. Ferroelectricity-induced resistive switching in Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3/Nb-dopedSrTiO3 epitaxial heterostructure, Applied Physics Letters, 100, 113505, (2012).
34. K.P. Biju, X. Liu (刘新军), M. Siddik, S. Kim, J. Shin, I. Kim, A.Ignatiev, and H. Hwang. Resistive switching characteristics and mechanism of thermally grown WOx thin films, Journal of Applied Physics, 110, 064505, (2011).
35. K.P. Biju, X.Liu (刘新军), S. Kim, S.Jung, J. Park, and H. Hwang. Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films, Physica Status Solidi (RRL) – Rapid Research Letters, 5, 89-91, (2011).
36. X. Cao, X. Li, X. Gao, X. Liu(刘新军), C. Yang, R. Yang, and P. Jin. All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature, Journal of Physics D: Applied Physics, 44, 255104, (2011).
37. K.P. Biju, X. Liu (刘新军), E.M. Bourim I. Kim, S. Jung, M. Siddik, J. Lee,and H. Hwang. Asymmetric bipolar resistive switching in solution- processed Pt/TiO2/W devices, Journal of Physics D: Applied Physics, 43, 495104, (2010).
38. X. Cao, X. Li, W. Yu, Y. Zhang,R Yang,X. Liu (刘新军), J. Kong,and W. Shen.Structural characteristics and resistive switching properties of thermally prepared TiO2thin films, Journalof Alloys and Compounds, 486, 458-461, (2009).
39. X. Cao, X. Li, X. Gao, W. Yu, X. Liu (刘新军), Y. Zhang,L. Chen and X. Cheng. Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications,Journal of Applied Physics,106, 073723, (2009).
40. R. Yang, X. Li, W. Yu, X. Gao, D. Shang, X. Liu(刘新军), X. Cao, Q. Wang, and L. Chen. The polarity origin of thebipolar resistance switching behaviors in metal/La0.7Ca0.3MnO3/Pt junctions, Applied Physics Letters, 95,072105, (2009).
参加会议 (报告、摘要及墙报)
41. X. Liu*, S. Li, S.K. Nandi, S.K. Nath, and R.G. Elliman. Origin of Current-Controlled Negative Differential Resistance Modes, Inaugural Chua Memristor Institute Conference (ICMIC), (Poster), Wuhan, China, (November 11-14, 2019).
42. X. Liu, S. Li, S.K. Nandi, S.K. Nath, and R.G. Elliman. Dual-window relaxation oscillation in NbOx memristor with double negative differential resistance, The International Conference on Memristive Materials, Devices & Systems (MEMRISYS), (Oral Presentation), Dresden, Germany, (July 08-11, 2019).
43. 刘新军, S. Li, S.K. Nandi, S.K. Nath, R.G. Elliman. 非晶氧化铌薄膜器件中的丝型阈值开关,中国物理学会2018年秋季会议,(墙报), 大连, 2018年9月13日至16日.
44. X. Liu, S. Li, S.K. Nandi, and R.G. Elliman. Nonlinear dynamics of niobium oxide coupled oscillators, The International Conference on Memristive Materials, Devices & Systems (MEMRISYS), (Oral Presentation), Beijing, China, (July 03-06, 2018).
45. X. Liu, S. Li, S.K. Nandi, and R.G. Elliman. Electrical self-oscillation in NbOx film devices for neuromorphic computing, MRS Spring Meeting, (Oral Presentation),Phoenix, Arizona, USA, (April 17-21, 2017).
46. X. Liu, S. Li, S.K. Nandi, and R.G. Elliman. Threshold switching and electrical self-oscillation in NbOx film devices, TheAustralian National Fabrication Facility (ANFF): 2016 Annual Research Showcase,(Oral Presentation), P48, National Centre for Synchrotron Science, Melbourne, Australia, (November 15-17, 2016).
47. X. Liu, S. Li, S.K. Nandi, D.K. Venkatachalam, and R.G. Elliman. Synchronization of niobium oxide coupled oscillators for neuro-inspired computing application,International Conference on Nanoscience and Nanotechnology, (Oral Presentation), National Convention Centre, Canberra,Australia, (February 7-11,2016).
48. X. Liu, S. Li, S.K. Nandi, D.K. Venkatachalam, and R.G. Elliman. Synchronization of NbOx coupled oscillators for neuro-inspired computing, Nanotechnology Entrepreneurship Workshop forEarly Career Researchers, (Poster), P72, Griffith University,Gold Coast, Queensland, Australia, (June 10-11, 2015).
49. X. Liu, S.K. Nandi, D.K. Venkatachalam, S. Li, andR.G. Elliman. Low-power memory-selector element based on the insulator metal transition in NbO2, MRS Spring Meeting, (Poster), San Francisco, California, USA, (April 6-10, 2015).
50. X. Liu, S.K. Nandi, D.K. Venkatachalam, S. Li, K. Belay, and R.G. Elliman. Finite element modelling of resistive switching in Nb2O5-based memory device, Conference on Optoelectronic and Microelectronic Materials &Devices (COMMAD), (Oral Presentation), Perth, Australia, (December 14-17, 2014).
51. X. Liu, S.K. Nandi, D.K.Venkatachalam, S. Li, K. Belay, and R.G. Elliman. A memory selector element based on the insulator-metal transition in NbO2, AIP congress, (Oral Presentation),Canberra, Australia, (December 7-11,2014).
52. X. Liu, S.K. Nandi, D.K.Venkatachalam, S. Li, K. Belay, and R.G. Elliman. Finite element modelling of resistive switching in Nb2O5, AIP congress, (Poster), Canberra, Australia, (December 7-11, 2014).
53. X. Liu, K.P. Biju, S. Park, S. Jung, S. Kim, J. Lee, W. Lee, J. Park, J. Shin, I. Kim,M. Siddik, K. Seo, S.M. Sadaf, and H Hwang. Resistive switching mechanism of Pr0.7Ca0.3MnO3-based memory device and assessing their suitability for nano-scale application, The 18th Korean Conference on Semiconductors (Semiconductor beyond IT) (Oral: FE1-2),P157, Jeju Island, Korea, (February 16-18, 2011).
54. X. Liu, K.P.Biju, E.M. Bourim, S. Park, I.Kim, S.M. Sadaf, and H. Hwang. Low-power and controllable memory window in Pr0.7Ca0.3MnO3/Yttria-stabilized Zirconia RRAM devices, International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2010), (Poster), Jeju Island, Korea,(November 21-24, 2010).
55. X. Liu, K.P.Biju, E.M. Bourim, M. Jo, W. Lee,S. Park, and H. Hwang. Resistive switching characteristics of Pt/Pr0.7Ca0.3MnO3(PCMO)/W memory devices in a sub-micron scale via-hole structure, Advances in Nonvolatile Memory Materials and Devices, (Oral Presentation), Suzhou,China, (July 11-17, 2010).
56. X. Liu, W. Yu, R. Yang, X. Li,and L. Chen. Resistance switching property of AgAl Alloy-La0.7Ca0.3MnO3-Ptsandwiches The 1st international symposium on advanced synthesis and processing technology for materials (ASPT08), (Oral Presentation),Wuhan, China, (November 14-17, 2008).
57. X. Liu, W. Yu, R.Yang, X. Li, and L. Chen. Resistance switching and data reliability of Ti-La0.7Ca0.3MnO3-Ptsandwiches The 2nd International Symposium on Innovations in Advanced Materials for Optics and Electronics, (Poster), Shanghai, China, (July 06-09, 2008).
58. 刘新军, 姜恩永, 宋威, 李志青, 吴萍, 白海力. CaMn1-xFexO3 (x = 0-0.35)的结构和磁性,天津市真空学会2006年学术年会暨天津市真空学会薄膜专业委员会第一届学术会议,p227–230,天津,2006年11月24日至25日.
59. 刘新军, 姜恩永, 宋威, 李志青, 吴萍, 白海力. LaMn1-xFexO3 (x = 0.3) 的低场直流磁化强度研究,第五届全国磁性薄膜与纳米磁学会议,p28,江苏 苏州,2006年5月12日至15日.
60. 刘新军, 姜恩永, 李志青, 吴萍, 白海力. 多晶 Nd0.85Na0.15MnO3的磁性和电输运性质,第十二届全国磁学和磁性材料会议,p72,福建 武夷山,2005 年 11月16日至21日.
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